Solid State Drives (SSD) (69)

CSSD-F120GBMP500EX670343

5 In StockNew3 Year (USA)

CSSD-F240GBMP500EX654936

Not In StockNew3 Year (USA)

SSDPEKKW010T7X1EX653764

Up to 1,800 MB/s (Seq. Read) | Up to 560 MB/s (Seq. Write)

Not In StockNew5 Year (USA)

SSDPEKKW256G7X1EX653762

Up to 1,570 MB/s (Seq. Read) | Up to 540 MB/s (Seq. Write)

Not In StockNew5 Year (USA)

SSDPEKKW512G8XTEX674296

Up to 3,230 MB/s (Seq. Read) | Up to 1,625 MB/s (Seq. Write)

128 In StockNew5 Year (USA)

RVD400-M22280-1TEX647868

In StockNew5 Year (USA)

MZ-75E1T0B/AMEX633268

Samsung 850 EVO MZ-75E1T0B/AM Internal Solid State Drive (SSD), 2.5" Form Factor, 1TB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

MZ-N5E1T0BWEX646491

SAMSUNG 850 EVO MZ-N5E1T0BW Internal Solid State Drive (SSD), M.2 Form Factor, 1TB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

MZ-7KE1T0BWEX632443

World’s First 32 layer 3D V-NAND | 10-Year Warranty

Samsung 850 Pro Series MZ-7KE1T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 1TB Capacity, SATA III (6Gb/s) Interface, Samsung MEX Controller, World’s First 32 layer 3D V-NAND.

In StockNew10 Year (USA)

MZ-76E1T0BWEX674004

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write)

Samsung 860 EVO MZ-76E1T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 1TB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 1 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

Please CallNew5 Year (USA)

MZ-N6E1T0BWEX673640

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit

Samsung 860 EVO Series MZ-N6E1T0BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 1TB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 1 GB Low...

180 In StockNew5 Year (USA)

MZ-76P1T0BWEX673647

Up to 560 MB/s (Seq. Read) | Up to 530 MB/s (Seq. Write)

Samsung 860 PRO MZ-76P1T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 1TB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 1 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 2 Million Hours Reliability (MTBF).

Please CallNew5 Year (USA)

MZ-V6E1T0BWEX652578

Up to 3,200 MB/s (Seq. Read) | Up to 1,900 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

118 In StockNew3 Year (USA)

MZ-V6P1T0BWEX652574

Up to 3,500 MB/s (Seq. Read) | Up to 2,100 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

314 In StockNew5 Year (USA)

MZ-V7S1T0B/AMEX694865

Up to 3,500 MB/s (Seq. Read) | Up to 3,300 MB/s (Seq. Write) | 600K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

11 In StockNew5 Year (USA)

MZ-V7P1T0BWEX679456

Up to 3,500 MB/s (Seq. Read) | Up to 2,700 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.3) | M.2 (2280) | AES 256-bit

Samsung 970 PRO Series MZ-V7P1T0BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 1TB Capacity, Up to 3,500 MB/s (Seq. Read), Up to 2,700 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 1 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5...

9 In StockNew5 Year (USA)

MZ-V8V1T0B/AMEX753791

Up to: 3,500 MB/s (Seq. Read) | 3,000 MB/s (Seq. Write) | 500K IOPS (Random Read) | 480K IOPS (Random Write)

2 In StockNew5 Year (USA)

MZ-V8P1T0B/AMEX743237

15 In StockNew5 Year (USA)

MZ-N5E250BWEX634427

SAMSUNG 850 EVO MZ-N5E250BW Internal Solid State Drive (SSD), M.2 Form Factor, 250GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

MZ-76E250BWEX674002

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write)

Samsung 860 EVO MZ-76E250BW Internal Solid State Drive (SSD), 2.5" Form Factor, 250GB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

2 In StockNew5 Year (USA)

MZ-N6E250BWEX673638

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit

Samsung 860 EVO Series MZ-N6E250BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 250GB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB...

673 In StockNew5 Year (USA)

MZ-V6E250BWEX652576

Up to 3,200 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

In StockNew3 Year (USA)

MZ-V7E250BWEX679450

Up to 3,400 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.3) | M.2 (2280) | AES 256-bit

Samsung 970 EVO Series MZ-V7E250BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 250GB Capacity, Up to 3,400 MB/s (Seq. Read), Up to 1,500 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5...

11 In StockNew5 Year (USA)

MZ-V7S250B/AMEX694863

Up to 3,500 MB/s (Seq. Read) | Up to 2,300 MB/s (Seq. Write) | 250K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

3 In StockNew5 Year (USA)