Solid State Drives (SSD), M.2 (49)

WDS512G1X0CEX660655

In StockNew5 Year (USA)

WDS500G2B0BEX663027

579 In StockNew1 Year (USA)

WDS200T2B0CEX745598

7 In StockNew5 Year (USA)

WDS200T2B0BEX666811

8 In StockNew1 Year (USA)

WDS200T1X0EEX751213

2 In StockNew5 Year (USA)

WDS256G1X0CEX660654

3 In StockNew5 Year (USA)

WDS250G2B0BEX661862

10 In StockNew1 Year (USA)

WDS100T2B0CEX745597

15 In StockNew5 Year (USA)

WDS100T2B0BEX663026

4 In StockNew1 Year (USA)

WDS100T1X0EEX751212

1 In StockNew5 Year (USA)

EX741290

Up to: 3,500 MB/s (Seq. Read) | 3,100 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

3 In StockNew5 Year (USA)

EX780067

Up to: 7,000 MB/s (Seq. Read) | 6,500 MB/s (Seq. Write) | 1400K IOPS (Random Read) | 1300K IOPS (Random Write)

9 In StockNew5 Year (USA)

EX766930

Up to: 3,500 MB/s (Seq. Read) | 3,200 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

2 In StockNew5 Year (USA)

EX780066

Up to: 7,000 MB/s (Seq. Read) | 6,500 MB/s (Seq. Write) | 1400K IOPS (Random Read) | 1300K IOPS (Random Write)

3 In StockNew5 Year (USA)

EX741289

Up to: 3,500 MB/s (Seq. Read) | 3,200 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

81 In StockNew5 Year (USA)

MZ-V7P512BWEX679455

Up to 3,500 MB/s (Seq. Read) | Up to 2,300 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.3) | M.2 (2280) | AES 256-bit

Samsung 970 PRO Series MZ-V7P512BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 512GB Capacity, Up to 3,500 MB/s (Seq. Read), Up to 2,300 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5...

2 In StockNew5 Year (USA)

MZ-V6P512BWEX652038

Up to 3,500 MB/s (Seq. Read) | Up to 2,100 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

In StockNew5 Year (USA)

MZ-V5P512BWEX636626

Up to 2,500 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.1) | M.2 (2280) | AES 256-bit

Samsung 950 Pro Series MZ-V5P512BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 512GB Capacity, Up to 2,500 MB/s (Seq. Read), Up to 1,500 MB/s (Seq. Write), PCIe 3.0 x4 (up to 32 GB/s), NVMe 1.1 Interface, Samsung UBX Controller, Samsung V-NAND Storage Memory, Samsung 512 MB Low Power...

Not In StockNew5 Year (USA)

MZ-V8P500B/AMEX743236

In StockNew5 Year (USA)

MZ-V8V500B/AMEX753790

Up to: 3,100 MB/s (Seq. Read) | 2,600 MB/s (Seq. Write) | 400K IOPS (Random Read) | 470K IOPS (Random Write)

Pre-orderNew5 Year (USA)

MZ-V7S500B/AMEX694864

Up to 3,500 MB/s (Seq. Read) | Up to 3,200 MB/s (Seq. Write) | 480K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

7 In StockNew5 Year (USA)

MZ-V6E500BWEX652577

Up to 3,200 MB/s (Seq. Read) | Up to 1,800 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

452 In StockNew3 Year (USA)

MZ-N6E500BWEX673639

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit

Samsung 860 EVO Series MZ-N6E500BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 500GB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB...

163 In StockNew5 Year (USA)

MZ-N5E500BWEX634704

Samsung 850 EVO MZ-N5E500BW Internal Solid State Drive (SSD), M.2 Form Factor, 500GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)