Top Selling Products (35)

SHGP31-1000GMEX741289

Up to: 3,500 MB/s (Seq. Read) | 3,200 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

Not In StockNew5 Year (USA)

MZ-V7S2T0B/AMEX698971

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

In StockNew5 Year (USA)

MZ-V7S1T0B/AMEX694865

Up to 3,500 MB/s (Seq. Read) | Up to 3,300 MB/s (Seq. Write) | 600K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

In StockNew5 Year (USA)

MZ-V7S500B/AMEX694864

Up to 3,500 MB/s (Seq. Read) | Up to 3,200 MB/s (Seq. Write) | 480K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

2 In StockNew5 Year (USA)

MZ-V7S250B/AMEX694863

Up to 3,500 MB/s (Seq. Read) | Up to 2,300 MB/s (Seq. Write) | 250K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

3 In StockNew5 Year (USA)

MZ-V7E250BWEX679450

Up to 3,400 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.3) | M.2 (2280) | AES 256-bit

Samsung 970 EVO Series MZ-V7E250BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 250GB Capacity, Up to 3,400 MB/s (Seq. Read), Up to 1,500 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5...

Not In StockNew5 Year (USA)

WDS200T2B0BEX666811

8 In StockNew1 Year (USA)

WDS500G2B0BEX663027

3 In StockNew1 Year (USA)

WDS100T2B0BEX663026

4 In StockNew1 Year (USA)

WDS250G2B0BEX661862

10 In StockNew1 Year (USA)

RVD400-M22280-1TEX647868

In StockNew5 Year (USA)