Top Selling Products (30)

MZ-V7S250B/AMEX694863

Up to 3,500 MB/s (Seq. Read) | Up to 2,300 MB/s (Seq. Write) | 250K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

3 In StockNew5 Year (USA)

MZ-V9E1T0B/AMEX806573

In StockNew5 Year (USA)

EX741290

Up to: 3,500 MB/s (Seq. Read) | 3,100 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

3 In StockNew5 Year (USA)

SHGP31-1000GMEX741289

Up to: 3,500 MB/s (Seq. Read) | 3,200 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

14 In StockNew5 Year (USA)

WDS250G2B0BEX661862

10 In StockNew1 Year (USA)

MZ-V7E250BWEX679450

Up to 3,400 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.3) | M.2 (2280) | AES 256-bit

Samsung 970 EVO Series MZ-V7E250BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 250GB Capacity, Up to 3,400 MB/s (Seq. Read), Up to 1,500 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5...

Not In StockNew5 Year (USA)