Top Selling Products (51)

MZ-V7P1T0BWEX679456

Up to 3,500 MB/s (Seq. Read) | Up to 2,700 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.3) | M.2 (2280) | AES 256-bit

Samsung 970 PRO Series MZ-V7P1T0BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 1TB Capacity, Up to 3,500 MB/s (Seq. Read), Up to 2,700 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 1 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5...

8 In StockNew5 Year (USA)

MZ-N5E1T0BWEX646491

SAMSUNG 850 EVO MZ-N5E1T0BW Internal Solid State Drive (SSD), M.2 Form Factor, 1TB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

MZ-N5E500BWEX634704

Samsung 850 EVO MZ-N5E500BW Internal Solid State Drive (SSD), M.2 Form Factor, 500GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

MZVPV256HDGL-00000EX637046

Up to 2150 MB/s Read & 1260 MB/s Write | NVMe PCIe 3.0 (x4) | M.2 2280

Samsung SM951 MZVPV256HDGL-00000 Solid State Drivem, 256GB Capacity, PCI-Express Gen 3.0 x 4 - 32 Gbps NVMe Host Interface, M.2 2280 Form Factor, 1.5 Million Hours MTBF.

Please CallNew3 Year (USA)

MTFDKBK2T0QFM-1BD1AABYYREX789677

Up to: 4,500 MB/s (Seq. Read) | 4,000 MB/s (Seq. Write) | 650K IOPS (Random Read) | 700K IOPS (Random Write)

In StockNew5 Year (USA)

MZ-N5E250BWEX634427

SAMSUNG 850 EVO MZ-N5E250BW Internal Solid State Drive (SSD), M.2 Form Factor, 250GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

MZ-V5P512BWEX636626

Up to 2,500 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.1) | M.2 (2280) | AES 256-bit

Samsung 950 Pro Series MZ-V5P512BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 512GB Capacity, Up to 2,500 MB/s (Seq. Read), Up to 1,500 MB/s (Seq. Write), PCIe 3.0 x4 (up to 32 GB/s), NVMe 1.1 Interface, Samsung UBX Controller, Samsung V-NAND Storage Memory, Samsung 512 MB Low Power...

Not In StockNew5 Year (USA)

MZ-V8P2T0B/AMEX755037

4 In StockNew5 Year (USA)

MZ-V8P1T0B/AMEX743237

4 In StockNew5 Year (USA)

EX741289

Up to: 3,500 MB/s (Seq. Read) | 3,200 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

61 In StockNew5 Year (USA)

MZ-V9P2T0B/AMEX785532

4 In StockNew5 Year (USA)

WDS400T2X0EEX785314

16 In StockNew5 Year (USA)