Top Selling Products (68)

MZ-7KE2T0BWEX635593

World’s First 32 layer 3D V-NAND | 10-Year Warranty

Samsung 850 Pro Series MZ-7KE2T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 2TB Capacity, SATA III (6Gb/s) Interface, Samsung MEX Controller, World’s First 32 layer 3D V-NAND.

In StockNew10 Year (USA)

WDS250G1B0AEX650879

In StockNew1 Year (USA)

MZ-N5E500BWEX634704

Samsung 850 EVO MZ-N5E500BW Internal Solid State Drive (SSD), M.2 Form Factor, 500GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

CSSD-F240GBMP500EX654936

Not In StockNew3 Year (USA)

WDS100T1B0AEX650877

In StockNew1 Year (USA)

WDS500G1B0AEX650982

In StockNew1 Year (USA)

SSDPEKKW010T7X1EX653764

Up to 1,800 MB/s (Seq. Read) | Up to 560 MB/s (Seq. Write)

Not In StockNew5 Year (USA)

MZ-V7S2T0B/AMEX698971

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

5 In StockNew5 Year (USA)

MZ-N6E500BWEX673639

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit

Samsung 860 EVO Series MZ-N6E500BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 500GB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB...

163 In StockNew5 Year (USA)

MZ-76P4T0BWEX673649

Up to 560 MB/s (Seq. Read) | Up to 530 MB/s (Seq. Write)

Samsung 860 PRO MZ-76P4T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 4TB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 4 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 2 Million Hours Reliability (MTBF).

Please CallNew5 Year (USA)

WDS100T2B0BEX663026

4 In StockNew1 Year (USA)

MZ-N6E1T0BWEX673640

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit

Samsung 860 EVO Series MZ-N6E1T0BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 1TB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 1 GB Low...

180 In StockNew5 Year (USA)

MZ-76E1T0BWEX674004

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write)

Samsung 860 EVO MZ-76E1T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 1TB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 1 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

Please CallNew5 Year (USA)

WDS200T2B0BEX666811

8 In StockNew1 Year (USA)

WDS250G2B0BEX661862

10 In StockNew1 Year (USA)

WDS500G2B0BEX663027

579 In StockNew1 Year (USA)

MZ-76P1T0BWEX673647

Up to 560 MB/s (Seq. Read) | Up to 530 MB/s (Seq. Write)

Samsung 860 PRO MZ-76P1T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 1TB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 1 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 2 Million Hours Reliability (MTBF).

Please CallNew5 Year (USA)

MZ-N6E2T0BWEX673641

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit

Samsung 860 EVO Series MZ-N6E2T0BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 2TB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 1 GB Low...

55 In StockNew5 Year (USA)

MZ-76E500BWEX674003

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write)

Samsung 860 EVO MZ-76E500BW Internal Solid State Drive (SSD), 2.5" Form Factor, 500GB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

Please CallNew5 Year (USA)

WDS400T2X0EEX785314

2 In StockNew5 Year (USA)