Top Selling Products (68)

MZ-V6E1T0BWEX652578

Up to 3,200 MB/s (Seq. Read) | Up to 1,900 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

118 In StockNew3 Year (USA)

MZ-V6P1T0BWEX652574

Up to 3,500 MB/s (Seq. Read) | Up to 2,100 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

314 In StockNew5 Year (USA)

MZ-V7S1T0B/AMEX694865

Up to 3,500 MB/s (Seq. Read) | Up to 3,300 MB/s (Seq. Write) | 600K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

3 In StockNew5 Year (USA)

MZ-V7P1T0BWEX679456

Up to 3,500 MB/s (Seq. Read) | Up to 2,700 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.3) | M.2 (2280) | AES 256-bit

Samsung 970 PRO Series MZ-V7P1T0BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 1TB Capacity, Up to 3,500 MB/s (Seq. Read), Up to 2,700 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 1 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5...

9 In StockNew5 Year (USA)

MZ-V8V1T0B/AMEX753791

Up to: 3,500 MB/s (Seq. Read) | 3,000 MB/s (Seq. Write) | 500K IOPS (Random Read) | 480K IOPS (Random Write)

2 In StockNew5 Year (USA)

MZ-V8P1T0B/AMEX743237

3 In StockNew5 Year (USA)

MZ-V9P1T0B/AMEX785531

6 In StockNew5 Year (USA)

MZ-N5E250BWEX634427

SAMSUNG 850 EVO MZ-N5E250BW Internal Solid State Drive (SSD), M.2 Form Factor, 250GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

MZ-76E250BWEX674002

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write)

Samsung 860 EVO MZ-76E250BW Internal Solid State Drive (SSD), 2.5" Form Factor, 250GB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

2 In StockNew5 Year (USA)

MZ-N6E250BWEX673638

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit

Samsung 860 EVO Series MZ-N6E250BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 250GB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB...

673 In StockNew5 Year (USA)

MZ-V6E250BWEX652576

Up to 3,200 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

In StockNew3 Year (USA)

MZ-V7E250BWEX679450

Up to 3,400 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.3) | M.2 (2280) | AES 256-bit

Samsung 970 EVO Series MZ-V7E250BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 250GB Capacity, Up to 3,400 MB/s (Seq. Read), Up to 1,500 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5...

11 In StockNew5 Year (USA)