Top Selling Products (34)

WDS100T1B0AEX650877

In StockNew1 Year (USA)

WDS100T1X0EEX751212

1 In StockNew5 Year (USA)

EX780067

Up to: 7,000 MB/s (Seq. Read) | 6,500 MB/s (Seq. Write) | 1400K IOPS (Random Read) | 1300K IOPS (Random Write)

In StockNew5 Year (USA)

EX780066

Up to: 7,000 MB/s (Seq. Read) | 6,500 MB/s (Seq. Write) | 1400K IOPS (Random Read) | 1300K IOPS (Random Write)

1 In StockNew5 Year (USA)

WDS100T1X0MEX814801

In StockNew5 Year (USA)

MZ-V9P4T0B/AMEX793947

19 In StockNew5 Year (USA)

MZ VAP4T0B/AMEX812264

In StockNew5 Year (USA)

MZ-V9P2T0B/AMEX785532

3 In StockNew5 Year (USA)

MZ-V9E2T0B/AMEX806572

In StockNew5 Year (USA)

MZ VAP2T0B/AMEX812263

4 In StockNew5 Year (USA)

MZ-V7S250B/AMEX694863

Up to 3,500 MB/s (Seq. Read) | Up to 2,300 MB/s (Seq. Write) | 250K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

1 In StockNew5 Year (USA)

MZ-76E250BWEX674002

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write)

Samsung 860 EVO MZ-76E250BW Internal Solid State Drive (SSD), 2.5" Form Factor, 250GB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

Not In StockNew5 Year (USA)