Top Selling Products (54)

MZ-V7S500B/AMEX694864

Up to 3,500 MB/s (Seq. Read) | Up to 3,200 MB/s (Seq. Write) | 480K IOPS (Ran. Read) | 550K IOPS (Ran. Write)

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

9 In StockNew5 Year

MZ-V6E500BWEX652577

Up to 3,200 MB/s (Seq. Read) | Up to 1,800 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

452 In StockNew3 Year

MZ-N6E500BWEX673639

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit

Samsung 860 EVO Series MZ-N6E500BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 500GB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB...

163 In StockNew5 Year

MZ-76E500BWEX674003

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write)

Samsung 860 EVO MZ-76E500BW Internal Solid State Drive (SSD), 2.5" Form Factor, 500GB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

Please CallNew5 Year

MZ-N5E500BWEX634704

Samsung 850 EVO MZ-N5E500BW Internal Solid State Drive (SSD), M.2 Form Factor, 500GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year

MZ-75E500B/AMEX633267

Samsung 850 EVO MZ-75E500B/AM Internal Solid State Drive (SSD), 2.5" Form Factor, 500GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year

MZ-76P4T0BWEX673649

Up to 560 MB/s (Seq. Read) | Up to 530 MB/s (Seq. Write)

Samsung 860 PRO MZ-76P4T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 4TB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 4 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 2 Million Hours Reliability (MTBF).

Please CallNew5 Year

MZ-76E4T0BWEX674006

Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write)

Samsung 860 EVO MZ-76E4T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 4TB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 4 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

Please CallNew5 Year

MZ-75E4T0B/AMEX646680

SAMSUNG 850 EVO MZ-75E4T0B/AM Internal Solid State Drive (SSD), 2.5" Form Factor, 4TB Capacity, SATA III (6Gb/s) Interface, Samsung MHX Controller, 3-D Vertical Memory Components, 1.5 million hours MTBF.

In StockNew5 Year

MZ-V7S2T0B/AMEX698971

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

11 In StockNew5 Year

MZ-V6P2T0BWEX652575

Up to 3,500 MB/s (Seq. Read) | Up to 2,100 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

1 In StockNew5 Year

MZ-76P2T0BWEX673648

Up to 560 MB/s (Seq. Read) | Up to 530 MB/s (Seq. Write)

Samsung 860 PRO MZ-76P2T0BW Internal Solid State Drive (SSD), 2.5" Form Factor, 2TB Capacity, SATA III (6Gb/s) Interface, Samsung MJX Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 2 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 2 Million Hours Reliability (MTBF).

Please CallNew5 Year