Top Selling Products (55)

MTFDKBK2T0QFM-1BD1AABYYREX789677

Up to: 4,500 MB/s (Seq. Read) | 4,000 MB/s (Seq. Write) | 650K IOPS (Random Read) | 700K IOPS (Random Write)

3 In StockNew5 Year (USA)

MZ-N5E250BWEX634427

SAMSUNG 850 EVO MZ-N5E250BW Internal Solid State Drive (SSD), M.2 Form Factor, 250GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3D V-NAND NAND Flash Memory, 1.5 million hours MTBF.

In StockNew5 Year (USA)

MZ-V5P512BWEX636626

Up to 2,500 MB/s (Seq. Read) | Up to 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.1) | M.2 (2280) | AES 256-bit

Samsung 950 Pro Series MZ-V5P512BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 512GB Capacity, Up to 2,500 MB/s (Seq. Read), Up to 1,500 MB/s (Seq. Write), PCIe 3.0 x4 (up to 32 GB/s), NVMe 1.1 Interface, Samsung UBX Controller, Samsung V-NAND Storage Memory, Samsung 512 MB Low Power...

Not In StockNew5 Year (USA)

MZ-V9P2T0B/AMEX785532

17 In StockNew5 Year (USA)

MZ-V8P1T0B/AMEX743237

In StockNew5 Year (USA)

MZ-V9P4T0B/AMEX793947

29 In StockNew5 Year (USA)

MZ-V9P1T0B/AMEX785531

2 In StockNew5 Year (USA)

EX741289

Up to: 3,500 MB/s (Seq. Read) | 3,200 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

58 In StockNew5 Year (USA)

MZ-V8P2T0B/AMEX755037

In StockNew5 Year (USA)

EX780067

Up to: 7,000 MB/s (Seq. Read) | 6,500 MB/s (Seq. Write) | 1400K IOPS (Random Read) | 1300K IOPS (Random Write)

In StockNew5 Year (USA)

EX766930

Up to: 3,500 MB/s (Seq. Read) | 3,200 MB/s (Seq. Write) | 570K IOPS (Random Read) | 600K IOPS (Random Write)

2 In StockNew5 Year (USA)

MZ-V8V1T0B/AMEX753791

Up to: 3,500 MB/s (Seq. Read) | 3,000 MB/s (Seq. Write) | 500K IOPS (Random Read) | 480K IOPS (Random Write)

In StockNew5 Year (USA)