1TB Intel SSD 760p Series M.2 NVMe SSD

 1TB Intel SSD 760p Series M.2 NVMe SSD 1TB Intel SSD 760p Series M.2 NVMe SSD 1TB Intel SSD 760p Series M.2 NVMe SSD 1TB Intel SSD 760p Series M.2 NVMe SSD 1TB Intel SSD 760p Series M.2 NVMe SSD 1TB Intel SSD 760p Series M.2 NVMe SSD
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Up to 3,230 MB/s (Seq. Read) | Up to 1,625 MB/s (Seq. Write)
3.4 out of 5, based on 5 votes


1 In StockNew5 Year




High Performance

Accelerate your PC with PCIe* bandwidth, 64-layer Intel® 3D NAND Technology, and twice the performance of its previous generation – the Intel® SSD 600p Series.




Low Power Consumption

Compared with its previous generation, the Intel® SSD 760p Series reduces its active power up to 50%.2




Intel Quality and Reliability

Thanks to Intel’s industry leading quality and reliability, the Intel® SSD 760p Series supports AES 256-bit self-encryption and offers a 5-year limited warranty




Made for Easy Installation

A small M.2 (80mm) form factor offers a wide range of capacities and simply plugs into M.2 - M key slots on major motherboards.


Series760p Series
Device TypeInternal Solid State Drive (SSD)
HighlightsIntel 760p Series SSDPEKKW010T8X1 Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 1TB Capacity, Up to 3,230 MB/s (Seq. Read), Up to 1,625 MB/s (Seq. Write), 1.6 Million Hours Reliability (MTBF).
Form FactorM.2 2280
InterfacePCIe NVMe 3.1 x4
Capacity1.02 TB
Weight< 10.00g
Dimension22.00 x 2.28 x 80.00 (mm) (W x H x D)
Sequential Read (up to)3,230 MB/s
Sequential Write (up to)1,625 MB/s
Random Read (8GB Span) (up to)340,000 IOPS
Random Write (8GB Span) (up to)275,000 IOPS
Power - Active50 mW
Power - Idle25 mW
Vibration - Operating2.17 GRMS
Vibration - Non-Operating3.13 GRMS
Shock (Operating and Non-Operating)1000 G
Operating Temperature Range0°C to 70°C
Endurance Rating (Lifetime Writes)576 TBW
Mean Time Between Failures (MTBF)1.6 million hours
Uncorrectable Bit Error Rate (UBER)<1 sector per 10^15 bits read
Warranty5 Year

What is V-NAND technology?

Shedding light on a whole new standard of capacity and performance.

Samsung V-NAND technology overcomes the capacity limitations of traditional 2D NAND technology with its revolutionary vertical design.
V-NAND also applies innovative Charge Trap Flash (CTF) technology which prevents data corruption caused by cell-to-cell interference.
The synergy of both structural and material innovations leads to improved speed, power efficiency, and endurance.


Vertical expansion breaks through horizontal limit

Samsung revolutionized the storage industry by shifting the planar NAND to a vertical structure. Samsung V-NAND technology features a unique design that stacks 48 layers on top of one another instead of trying to decrease the cells’ pitch size. Samsung used Channel Hole Technology (CHT) to enable cells to connect vertically with one another through a cylindrical channel that runs through stacked cells.



Material innovation that no one can match

Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF technology which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges to maintain cell integrity.

This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.




Vertical architecture paves the way for amplified capacity

Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND technology lets heavy-workload users and data centers store and handle more data with greatly improved capacity.

Samsung V-NAND enables up to 100 layers of cells to be stacked with the potential to scale the density up to 1 Terabit. The 2D planar NAND density ceiling can only reach the minimum density of V-NAND.



Innovative algorithms equal faster performance

Traditional planar NAND memory requires the creation of sets of complex program algorithms to prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to cell-to-cell interference.

V-NAND does not need to go through a complex program algorithm to write data, and this enables the memory to write data up to two times faster than traditional 2D planar NAND flash memory.



Unprecedented power efficiency

Since V-NAND technology has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power consumption is substantially lowered by up to 45 percent compared to planar NAND memory.



Embedded high endurance to store your valuable data

Samsung V-NAND provides up to twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, and employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.

In comparison between 3-bit and 2-bit, Samsung 3-bit V-NAND shows endurance similar to that of 2-bit planar NAND, and even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.


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