512GB Samsung 970 PRO M.2 NVMe SSD
Not In StockNew5 Year (USA)
Samsung 970 PRO
The SSD that goes further
Experience the best. For intensive workloads on PCs and workstations, the 970 PRO gives utmost performance enabled by Samsung's NVMe SSD leadership. The latest V-NAND technology and new Phoenix controller in a compact M.2 (2280) form factor surpass the demands of tech enthusiasts and professionals.
*1GB=1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system file and maintenance use, so the actual capacity may differ from what is indicated on the product label.
Performance that puts you in command. The 970 PRO combines the next-gen PCIe Gen 3x4 NVMe interface with the latest V-NAND technology and a newly enhanced Phoenix controller to achieve fearless read/write speeds up to 3,500/2,700 MB/s*, approximately 30 percent faster than the previous generation.
* Sequential and random performance measurements are based on IOmeter 1.1.0. Performance may vary based on the SSD's firmware version, system hardware and configuration.
* Test system configuration: Intel® Core i7-7700K CPU 4.2GHz, DDR4 2400MHz 32GB, OS-Window 10 Built 10240, Chipset-ASUS PRIME Z270-A
Get the ultimate sustainable performance. The 970 PRO delivers up to 1,200 TBW* with a 5-year limited warranty, achieving 50 percent greater endurance than the previous generation, all powered by the latest V-NAND technology.
* TBW: Terabytes Written
* Warrantied TBW for 970 PRO: 600 TBW for 512GB model, 1,200 TBW for 1TB model.
* 5-years or TBW, whichever comes first. For more information on the warranty, please find the enclosed warranty statement in the package.
Achieve a new level of drive confidence. Samsung’s advanced nickel-coated controller and heat spreader on the 970 PRO enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops.
Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance.
|Highlights||Samsung 970 PRO Series MZ-V7P512BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 512GB Capacity, Up to 3,500 MB/s (Seq. Read), Up to 2,300 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 2bit MLC Storage Memory, Samsung 512 MB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).|
|Capacity||512 GB (1 GB=1 Billionbyte by IDEMA)|
|Form Factor||M.2 2280|
|Interface||PCIe Gen 3.0 x4, NVMe 1.3|
|Dimension||Max 80.15 x 22.15 x 2.38 (mm) (W x H x D)|
|Storage Memory||Samsung V-NAND 2-bit MLC|
|Controller||Samsung Phoenix Controller|
|Cache Memory||512MB Low Power DDR4 SDRAM|
|Software||Magician Software for SSD management|
|Installation Kit||Not Available|
|Warranty||5 Year Limited Warranty or 600 TBW Limited Warranty|
|TRIM Support||TRIM Supported|
|S.M.A.R.T Support||S.M.A.R.T Supported|
|GC (Garbage Collection)||Auto Garbage Collection Algorithm|
|Encryption Support||AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)|
|WWN Support||Not Supported|
|Device Sleep Mode Support||Yes|
|Sequential Read||Up to 3,500 MB/sec|
|Sequential Write||Up to 2,300 MB/sec|
|Random Read (4KB, QD32)||Up to 370,000 IOPS|
|Random Write (4KB, QD32)||Up to 500,000 IOPS|
|Random Read (4KB, QD1)||Up to 15,000 IOPS|
|Random Write (4KB, QD1)||Up to 50,000 IOPS|
|Average Power Consumption (system level)||Average: 5.2 Watts|
Maximum: 8.5 Watts (Burst mode)
|Power consumption (Idle)||Max. 30mW|
|TRIM Support||1.5 Million Hours Reliability (MTBF)|
|Operating Temperature||0 °C to 70 °C (Measured by SMART Temperature. Proper airflow recommended)|
|Shock||1,500 G & 0.5 ms (Half sine)|
What is V-NAND technology?
Shedding light on a whole new standard of capacity and performance.
Samsung V-NAND technology overcomes the capacity limitations of traditional 2D NAND technology with its revolutionary vertical design.
V-NAND also applies innovative Charge Trap Flash (CTF) technology which prevents data corruption caused by cell-to-cell interference.
The synergy of both structural and material innovations leads to improved speed, power efficiency, and endurance.
Vertical expansion breaks through horizontal limit
Samsung revolutionized the storage industry by shifting the planar NAND to a vertical structure. Samsung V-NAND technology features a unique design that stacks 48 layers on top of one another instead of trying to decrease the cells’ pitch size. Samsung used Channel Hole Technology (CHT) to enable cells to connect vertically with one another through a cylindrical channel that runs through stacked cells.
Material innovation that no one can match
Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF technology which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges to maintain cell integrity.
This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.
Vertical architecture paves the way for amplified capacity
Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND technology lets heavy-workload users and data centers store and handle more data with greatly improved capacity.
Samsung V-NAND enables up to 100 layers of cells to be stacked with the potential to scale the density up to 1 Terabit. The 2D planar NAND density ceiling can only reach the minimum density of V-NAND.
Innovative algorithms equal faster performance
Traditional planar NAND memory requires the creation of sets of complex program algorithms to prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to cell-to-cell interference.
V-NAND does not need to go through a complex program algorithm to write data, and this enables the memory to write data up to two times faster than traditional 2D planar NAND flash memory.
Unprecedented power efficiency
Since V-NAND technology has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power consumption is substantially lowered by up to 45 percent compared to planar NAND memory.
Embedded high endurance to store your valuable data
Samsung V-NAND provides up to twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, and employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.
In comparison between 3-bit and 2-bit, Samsung 3-bit V-NAND shows endurance similar to that of 2-bit planar NAND, and even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.
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