2TB Samsung 860 EVO M.2 SATA SSD

 2TB Samsung 860 EVO M.2 SATA SSD 2TB Samsung 860 EVO M.2 SATA SSD 2TB Samsung 860 EVO M.2 SATA SSD 2TB Samsung 860 EVO M.2 SATA SSD 2TB Samsung 860 EVO M.2 SATA SSD 2TB Samsung 860 EVO M.2 SATA SSD
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Up to 550 MB/s (Seq. Read) | Up to 520 MB/s (Seq. Write) | M.2 (2280) | AES 256-bit
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MZ-N6E2T0BWEX673641

52 In StockNew5 Year

Capacity
250GB500GB1TB2TB
Samsung 860 EVO Series MZ-N6E2T0BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 2TB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 1 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).
Description
Specification
FAQ
Warehouse

Samsung 860 EVO

 

 

The SSD to trust

The newest edition to the world’s best-selling* SATA SSD series, the Samsung 860 EVO. Specially designed for mainstream PCs and laptops, with the latest V-NAND and a robust algorithm-based controller, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.

* Sources: NPD (US data from Jan. 2015 to Oct. 2017) and GfK (EU5 data from Jan. 2015 to Sep. 2017, China data from Jan. 2016 to Sep. 2017)

 

 

 

Enhanced performance

Speeds are more consistent, even with heavy workloads and multi-tasks. The 860 EVO performs at sequential writes up to 520 MB/s* with Intelligent TurboWrite technology, and sequential reads up to 550 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB for faster file transfer.

* Performance may vary based on SSD’s firmware version and system hardware & configuration. Sequential write performance measurements are based on Intelligent TurboWrite technology. Sequential performance measurements based on CrystalDiskMark v.5.0.2 and IOmeter 1.1.0. The sequential write performances after Intelligent TurboWrite region are 300 MB/s for 250/500 GB and 500 MB/s for 1 TB.

* Test system configuration: Intel Core i5-3550 CPU @ 3.3 GHz, DDR3 1333 MHz 4 GB, OS – Windows 7 Ultimate x64, Chipset: ASUS P8H77-V

* The TurboWrite buffer size varies based on the capacity of the SSD; 12 GB for 250 GB model, 22 GB for 500 GB model, 42 GB for 1 TB model and 78 GB for 2/4 TB. For more information on the TurboWrite, please visit www.samsungssd.com 

 

 

 

Boosted endurance

Safely store and render large sized 4K videos and 3D data used by the latest applications, up to 8x higher TBW (Terabytes Written)* than the previous 850 EVO. The latest V-NAND technology gives you up to 2,400 TBW, or is backed by a 5-year limited warranty.*

* Warrantied TBW for 860 EVO: 150 TBW for 250 GB model, 300 TBW for 500 GB model, 600 TBW for 1 TB model, 1,200 TBW for 2 TB model and 2,400 TBW for 4 TB model.

* 5-years or TBW, whichever comes first. For more information on the warranty, please find the enclosed warranty statement in the package

 

 

Smart compatibility

Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility. Our advanced engineering makes the 860 EVO more compatible with your computing system.

 

 

 

Multi form factors

Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.

 

 

 

Samsung Magician

 

  • Management software

Samsung Magician software is designed to help you manage your SSD with a simple and intuitive user interface.

  • Firmware update

Get notifications when new firmware is released, and easily install updates for enhanced performance, stability, and compatibility.

  • Performance benchmark

Check your SSD's sequential and random read/write speeds, so you can maintain superb performance.

  • Data security

Protect data by selecting security options. The 860 EVO supports AES 256-bit hardware-based encryption and is compliant with TCG Opal and IEEE 1667.

General
BrandSamsung
Series860 EVO
ModelMZ-N6E2T0BW
HighlightsSamsung 860 EVO Series MZ-N6E2T0BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 2TB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 1 GB Low Power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).
Specifications
ApplicationClient PCs
Capacity2 TB (1 GB=1 Billionbyte by IDEMA)
Form FactorM.2 2280
InterfaceSATA III
DimensionMax 80.15 x 22.15 x 2.38 (mm) (W x H x D)
WeightMax 8.0g
Storage MemorySamsung V-NAND 3bit MLC
ControllerSamsung MJX Controller
Cache Memory1 GB Low Power DDR4 SDRAM
SoftwareMagician Software for SSD management
Installation KitNot Available
Warranty5 Year Limited Warranty or 1,200 TBW Limited Warranty
Special Feature
TRIM SupportTRIM Supported
S.M.A.R.T SupportS.M.A.R.T Supported
GC (Garbage Collection)Auto Garbage Collection Algorithm
Encryption SupportAES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
WWN SupportYes
Device Sleep Mode SupportYes
Performance
Sequential ReadUp to 550 MB/sec
Sequential WriteUp to 520 MB/sec
Random Read (4KB, QD32)Up to 97,000 IOPS
Random Write (4KB, QD32)Up to 88,000 IOPS
Random Read (4KB, QD1)Up to 10,000 IOPS
Random Write (4KB, QD1)Up to 42,000 IOPS
Environment
Average Power Consumption (system level)Average: 3.0 Watts
Maximum: 4.5 Watts (Burst mode)
Power consumption (Idle)Max. 50mW
TRIM Support1.5 Million Hours Reliability (MTBF)
Operating Temperature0 °C to 70 °C (Measured by SMART Temperature. Proper airflow recommended)
Shock1500G , duration 0.5m sec, 3 axis

What is V-NAND technology?

Shedding light on a whole new standard of capacity and performance.

Samsung V-NAND technology overcomes the capacity limitations of traditional 2D NAND technology with its revolutionary vertical design.
V-NAND also applies innovative Charge Trap Flash (CTF) technology which prevents data corruption caused by cell-to-cell interference.
The synergy of both structural and material innovations leads to improved speed, power efficiency, and endurance.

 

Vertical expansion breaks through horizontal limit

Samsung revolutionized the storage industry by shifting the planar NAND to a vertical structure. Samsung V-NAND technology features a unique design that stacks 48 layers on top of one another instead of trying to decrease the cells’ pitch size. Samsung used Channel Hole Technology (CHT) to enable cells to connect vertically with one another through a cylindrical channel that runs through stacked cells.

 

 

Material innovation that no one can match

Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF technology which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges to maintain cell integrity.

This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.

 

 

 

Vertical architecture paves the way for amplified capacity

Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND technology lets heavy-workload users and data centers store and handle more data with greatly improved capacity.

Samsung V-NAND enables up to 100 layers of cells to be stacked with the potential to scale the density up to 1 Terabit. The 2D planar NAND density ceiling can only reach the minimum density of V-NAND.

 

 

Innovative algorithms equal faster performance

Traditional planar NAND memory requires the creation of sets of complex program algorithms to prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to cell-to-cell interference.

V-NAND does not need to go through a complex program algorithm to write data, and this enables the memory to write data up to two times faster than traditional 2D planar NAND flash memory.

 

 

Unprecedented power efficiency

Since V-NAND technology has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power consumption is substantially lowered by up to 45 percent compared to planar NAND memory.

 

 

Embedded high endurance to store your valuable data

Samsung V-NAND provides up to twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, and employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.

In comparison between 3-bit and 2-bit, Samsung 3-bit V-NAND shows endurance similar to that of 2-bit planar NAND, and even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.

 

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