512GB Samsung 960 PRO M.2 NVMe SSD

 512GB Samsung 960 PRO M.2 NVMe SSD 512GB Samsung 960 PRO M.2 NVMe SSD 512GB Samsung 960 PRO M.2 NVMe SSD 512GB Samsung 960 PRO M.2 NVMe SSD 512GB Samsung 960 PRO M.2 NVMe SSD
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Up to 3,500 MB/s (Seq. Read) | Up to 2,100 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit
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In StockNew5 Year (USA)


This product has been recently added to our store, the description has not been entered yet but will be done soon. You may still purchase this item by clicking on the "Add To Cart" button to add it to your shopping cart. For the moment you can refer to the manufacturer's website for the description and features list.

Series950 Pro
HighlightsSamsung 950 Pro Series MZ-V5P512BW Internal Solid State Drive (SSD), M.2 (2280) Form Factor, 512GB Capacity, Up to 2,500 MB/s (Seq. Read), Up to 1,500 MB/s (Seq. Write), PCIe 3.0 x4 (up to 32 GB/s), NVMe 1.1 Interface, Samsung UBX Controller, Samsung V-NAND Storage Memory, Samsung 512 MB Low Power DDR3 SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).
ApplicationClient PCs
Capacity512 GB (1 GB=1 Billionbyte by IDEMA)
Form FactorM.2 2280
InterfacePCIe 3.0 x4 (up to 32 GB/s) NVMe 1.1
DimensionMax. 80.15 x 22.15 x 2.38 (mm) (W x H x D)
WeightMax. 10g
Storage MemorySamsung V-NAND
ControllerSamsung UBX Controller
Cache MemorySamsung 512 MB Low Power DDR3 SDRAM
SoftwareMagician Software for SSD management
Installation KitNot Available
Warranty5 Year Limited Warranty or 400 TBW Limited Warranty
Special Feature
TRIM SupportTRIM Supported
S.M.A.R.T SupportS.M.A.R.T Supported
GC (Garbage Collection)Auto Garbage Collection Algorithm
Encryption SupportAES 256-bit for User Data Encryption
TCG Opal Family Spec and eDrive(IEEE1667) to be supported by FW update
WWN SupportN/A
Device Sleep Mode SupportYes
Sequential ReadUp to 2,500 MB/sec
Sequential WriteUp to 1,500 MB/sec
Random Read (4KB, QD32)Up to 300,000 IOPS
Random Write (4KB, QD32)Up to 110,000 IOPS
Random Read (4KB, QD1)Up to 12,000 IOPS
Random Write (4KB, QD1)Up to 43,000 IOPS
Average Power Consumption (system level)Average: 5.7 Watts
Maximum: 7.0 Watts (Burst mode)
Power consumption (Idle)Max. 1.7 Watts
TRIM Support1.5 Million Hours Reliability (MTBF)
Operating Temperature0 °C to 70 °C (Measured by SMART Temperature. Proper airflow recommended)
Shock1500G , duration 0.5m sec, 3 axis

What is V-NAND technology?

Shedding light on a whole new standard of capacity and performance.

Samsung V-NAND technology overcomes the capacity limitations of traditional 2D NAND technology with its revolutionary vertical design.
V-NAND also applies innovative Charge Trap Flash (CTF) technology which prevents data corruption caused by cell-to-cell interference.
The synergy of both structural and material innovations leads to improved speed, power efficiency, and endurance.


Vertical expansion breaks through horizontal limit

Samsung revolutionized the storage industry by shifting the planar NAND to a vertical structure. Samsung V-NAND technology features a unique design that stacks 48 layers on top of one another instead of trying to decrease the cells’ pitch size. Samsung used Channel Hole Technology (CHT) to enable cells to connect vertically with one another through a cylindrical channel that runs through stacked cells.



Material innovation that no one can match

Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF technology which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges to maintain cell integrity.

This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.




Vertical architecture paves the way for amplified capacity

Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND technology lets heavy-workload users and data centers store and handle more data with greatly improved capacity.

Samsung V-NAND enables up to 100 layers of cells to be stacked with the potential to scale the density up to 1 Terabit. The 2D planar NAND density ceiling can only reach the minimum density of V-NAND.



Innovative algorithms equal faster performance

Traditional planar NAND memory requires the creation of sets of complex program algorithms to prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to cell-to-cell interference.

V-NAND does not need to go through a complex program algorithm to write data, and this enables the memory to write data up to two times faster than traditional 2D planar NAND flash memory.



Unprecedented power efficiency

Since V-NAND technology has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power consumption is substantially lowered by up to 45 percent compared to planar NAND memory.



Embedded high endurance to store your valuable data

Samsung V-NAND provides up to twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, and employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.

In comparison between 3-bit and 2-bit, Samsung 3-bit V-NAND shows endurance similar to that of 2-bit planar NAND, and even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.