1TB Samsung 850 EVO M.2 SATA SSD

Samsung 850 EVO

What is 3D V-NAND and how does it differ from existing technology?

Samsung's unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today's conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.

Optimize daily computing with TurboWrite technology for unrivalled read/write speeds

Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.

* PCmark7(250GB) : 6700(840 EVO) > 7600(850 EVO)

** Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) > 88,000 IOPS(850 EVO)

Get into the fast lane with the improved RAPID mode

Samsung's Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilizing unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.

* PCMARK7 RAW(250GB) : 7500 > 15000(Rapid mode)

Guaranteed endurance and reliability bolstered by 3D V-NAND technology

The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimized performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.

* TBW : Total Bytes Written
** TBW : 43(840 EVO) > 75(850 EVO 120/250GB), 150(850 EVO 500/1TB)
*** Sustained Performance(250GB) : 3300 IOPS(840 EVO) > 6500 IOPS(850 EVO), Performance measured after 12 hours "Random Write" test

Compute longer with improved energy efficiency backed by 3D V-NAND

The 850 EVO delivers significantly longer battery life on your notebook with a controller optimized for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND.

* Power(250GB) : 3.2 Watt(840 EVO) > 2.4 Watt(850 EVO)

Secure valuable data through advanced AES 256 encryption

The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256 encryption-bit security technology secures data without any performance degradation and complies with TCG Opal 2.0. It is also compatible with Microsoft e-drive IEEE1667 so your data is protected at all times for your peace of mind.

Protect against overheating with a highly responsive Dynamic Thermal Guard

The 850 EVO's Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data. When temperatures rise above an optimal threshold, the Thermal Guard automatically throttles temperatures down protecting your data while maintaining responsiveness to ensure your computer is always safe from overheating.

Level up to the 850 EVO simply without any hassle

In three simple steps the Samsung/s One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO. The Samsung Magician software also allows you to optimize and manage your system best suited for your SSD.

Acquire an integrated in-house solution consisting of top-quality components

Samsung is the only SSD brand to design and manufacture all its components in-house allowing complete optimized integration. The result - enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the MEX/MGX controller.

3D V-NAND

Current and Future Data Demands

Worldwide data transferal continues to grow at an explosive rate. The amount of data being shared by average users on a daily basis is at an all-time high:

• Facebook: 250 billion photos uploaded per day

• Twitter: 100,000 new tweets per minute

• YouTube: 30 hours of video uploaded per minute

• flickr: 3,000 photos uploaded per minute

• foursquare: over 2,000 check-ins per minute

Even semiconductor and memory chip development add to this increase in data sharing. Currently, these fields account for the transferal of approximately 4 Exabytes of data per month. However, that number is projected to increase to 10 Exabytes per month in 2016. Improvements must be made to existing memory to rise to the challenge of such rapid data growth.

Benefits of Samsung V-NAND over 2D Planar NAND

• More capacity

• More speed

• More endurance

• More power efficiency

Samsung's new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including solid state drives (SSDs). Consumers can expect their handheld computers to perform better for longer periods of time between charges. Datacenter managers can expect increased productivity and longevity while saving on their power bill.

Structural Changes Lead to Samsung V-NAND Memory

Over the past 15 years, NAND Flash memory cell structure has gone from 120nm scale to 19nm scale. Along with this drastically shrinking structure, capacity has grown by 100 times. Just how is Samsung V-NAND Flash memory able to offer 100 times the capacity in only 1/10th the same area? That's where the V in V-NAND comes in, as Samsung stacks the cells vertically.

Samsung's three-dimensional Vertical NAND Flash memory (3D V-NAND) breaks free of the scaling limit for existing NAND Flash technology. Samsung has developed a new structure through its first 24-layer V-NAND.

Problems with Shrinking Technology

Shrinking is a fundamental technological advancement in almost any field, but it gains significant importance in memory engineering. As memory structures shrink, so do the multitude of mobile devices people worldwide use on a daily basis. Samsung has committed considerable resources and effort toward researching and developing shrinking advancements while also working to mitigate the two biggest problems inherent in shrinking technology.

Cell-to-Cell Interference

When an electric charge flows into one cell, an electric charge flows into a neighboring cell (known as the coupling effect). This extraneous charge to the neighboring cell actually changes the stored data, resulting in corruption of that data. This interference does not occur when the space between cells is greater than 30nm, but as that space shrinks smaller than 20nm, the chance for cell-to-cell interference increases.

Patterning

Patterning is a manufacturing technology developed for photolithography to enhance density. The patterning process allows for geometries half as wide as the scanner is capable of printing, but it has its limits within the 10nm process range.

Overcoming Inherent Shrinking Problems

Samsung has developed and applied a variety of technologies to prevent both data-corrupting interference and the limits of patterning. 3D V-NAND replaces 2D Planar NAND's conductor with an insulator that allows cells to hold their charges after writing data. Due to its vertical cell arrangement, Samsung's 3D V-NAND features a wider bit line, effectively removing cell-to-cell interference.

Stacking the vertical layers in three dimensions allowed for 24-layer products in 2013 and has increased to 32-layer products in June of 2014. Using stacking instead of photolithography to increase capacity eliminated the patterning limitation.