Samsung PM863 MZ-7LM3T8E 2.5" 3.8TB SATA III MLC Internal Enterprise Solid State Drive (SSD)
131 In StockNew3 Year
A leading-edge SSD in performance, endurance and energy efficiency
The huge growth in data traffic is placing crucial demands on data centers running 24/7 to reach faster speeds while operating cost-efficiently. The Samsung SSD PM863 is the optimal solution. Boasting a wide-capacity up to 3.84 TB in a 2.5-inch form factor, PM863 saves valuable space without extra power consumption or compromise in performance thanks to groundbreaking Samsung V-NAND technology. PM863 delivers high random Input/Output Operations Per Second (IOPS), lower latency, higher reliability and reduced Total Cost of Ownership (TCO) under mixed workloads, ideal for Content Delivery Networks (CDNs), streaming or Web servers.
Achieve high endurance with V-NAND technology
PM863 features cutting-edge Samsung V-NAND technology that stacks the vertical layers in three dimensions, solving the cell-to-cell interference that causes data corruption in planar NAND. This technology leads to increased capacity on the same footprint, as well as increased performance, endurance and power efficiency - all essentials for data centers.
Optimized performance for mixed workload
PM863 shows outstanding random read/write speeds up to 99K/10K IOPS respectively with consistent and constant performance, which is essential for data centers. Based on internal tests,* the PM863 maintains an IOPS consistency level of 90 percent or higher under virtually any write ratio conditions.
* IOPS consistency test under 4 KB random read/write mixed workload with 960 GB PM863
IOPS Consistency = ([IOPS in the 99.9th percentile] ÷ [Average IOPS]) × 100 (higher is better)
Ensure data integrity for improved reliability
PM863 demonstrates low probability of data corruption and maintains high level of data integrity. End-to-End Protection enables output data to remain consistent with input data along the entire data transfer path by detecting and remedying signal discrepancies in real time using the Error Correcting Code (ECC) engine.
Power-Loss Protection guards against data corruption or loss in the write cache in the event of power failure using built-in tantalum capacitors. The Dynamic Thermal Guard algorithm monitors the temperature of the SSD by throttling back the performance in order to prevent thermal shutdown.
Lower TCO without sacrificing performance
The PM863 boasts better performance-power ratio than mechanical drives. This power-efficiency reduces the operating costs of data centers. The NAND flash-based PM863 provides high reliability, guaranteed with 2 Million Mean Time Between Failure (MTBF) and the Total Bytes Written up to 5,600 TBW* (Tera Bytes Written).
* 3,840 GB model
Leverage the expertize of a technology leader in innovation
As a global leader in the SSD market, Samsung is a single-solution provider that actually designs and integrates crucial components of the SSD in-house, the DRAM, NAND flash, controller and firmware. Because Samsung has intimate knowledge of every component and part, and is a leader in V-NAND technology innovation, it can fine-tune each element at every stage of development and create perfect synergy.
General Brand Samsung Series PM863 Series Model MZ-7LM3T8E Highlights Samsung PM863 MZ-7LM3T8E Internal Solid State Drive (SSD), 2.5" Form Factor, 3840GB Capacity, SATA III (6Gb/s) Interface, Samsung 32 layer V-NAND, Samsung 7th Generation SATA 6 Gbps Controller for Data Center, 2.0 million hours MTBF. General Feature Capacity 3840GB Form Factor 2.5" Interface SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface Dimension (WxHxD) Max 100.2 x 69.85 x 6.8 (mm) Weight Max 60g NAND Type Samsung 32 layer V-NAND Controller Samsung 7th Generation SATA 6 Gbps Controller for Data Center Performance Sequential Read Up to 540 MB/sec Sequential Write Up to 480 MB/sec Random Read (4KB, QD32) Up to 99,000 IOPS Random Write (4KB, QD32) Up to 18,000 IOPS Environment Average Power Consumption (system level): 4.1 Watt (Write) Allowable Voltage 5V ± 5% Allowable voltage Reliability (MTBF) 2.0 Million Hours Reliability (MTBF) Operating Temperature 0 - 70 °C Operating Temperature Shock 1,500G & 0.5ms